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SIS990DN-T1-GE3
278-SIS990DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Tech Specifications
Package/Case
100
Continuous Drain Current (ID)
12.1A
Drain to Source Resistance
86mR
Drain to Source Voltage (Vdss)
100V
Fall Time
6ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
250pF
SIS990DN-T1-GE3 Description
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
FAQ
Does SIS990DN-T1-GE3 have quantity-based pricing?
Yes. SIS990DN-T1-GE3 currently has 5 pricing tier(s), starting from 10 units.
What voltage specification is listed for SIS990DN-T1-GE3?
What package or case is SIS990DN-T1-GE3 available in?
What is the standard lead time for SIS990DN-T1-GE3?
Are there related or alternative parts for SIS990DN-T1-GE3?
Availability
(In Stock :
2566 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.69772 | $6.98 |
| 30+ | $0.64628 | $19.39 |
| 100+ | $0.58800 | $58.80 |
| 500+ | $0.56057 | $280.29 |
| 1000+ | $0.54857 | $548.57 |
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