


Vishay
SISA12ADN-T1-GE3
278-SISA12ADN-T1-GE3
PDF Datasheet
30V 25A N-Ch MOSFET, 4.3mR Rds On, Surface Mount
17 weeks
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Responsible qualityTech Specifications
Continuous Drain Current (ID)
25A
Drain to Source Voltage (Vdss)
30V
Input Capacitance
2.07nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Surface Mount
Package Quantity
3000
SISA12ADN-T1-GE3 Description
30V 25A N-Ch MOSFET, 4.3mR Rds On, Surface Mount
FAQ
What voltage specification is listed for SISA12ADN-T1-GE3?
The listed voltage-related specification for SISA12ADN-T1-GE3 is 30V.
What package or case is SISA12ADN-T1-GE3 available in?
Is SISA12ADN-T1-GE3 currently in stock?
What is SISA12ADN-T1-GE3?
What is the standard lead time for SISA12ADN-T1-GE3?



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