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Vishay
SISA18ADN-T1-GE3
278-SISA18ADN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
17 weeks
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Tech Specifications
Continuous Drain Current (ID)
38.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
9.6mR
Drain to Source Voltage (Vdss)
30V
Fall Time
7ns
Gate to Source Voltage (Vgs)
-16V
Input Capacitance
1nF
Max Operating Temperature
150°C
SISA18ADN-T1-GE3 Description
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
FAQ
What is SISA18ADN-T1-GE3?
SISA18ADN-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability
(In Stock :
6076 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 50+ | $0.24784 | $12.39 |
| 150+ | $0.22268 | $33.40 |
| 500+ | $0.17378 | $86.89 |
| 3000+ | $0.16009 | $480.27 |
| 6000+ | $0.15186 | $911.16 |
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