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SISS23DN-T1-GE3
278-SISS23DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor,
18 weeks
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Tech Specifications
Continuous Drain Current (ID)
27A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
50ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
8.84nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SISS23DN-T1-GE3 Description
Power Field-Effect Transistor,
FAQ
Are there related or alternative parts for SISS23DN-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is SISS23DN-T1-GE3?
What is the mounting type of SISS23DN-T1-GE3?
Is SISS23DN-T1-GE3 currently in stock?
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Availability
(In Stock :
1712 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.74228 | $7.42 |
| 30+ | $0.66000 | $19.80 |
| 100+ | $0.54883 | $54.88 |
| 500+ | $0.50160 | $250.80 |
| 1000+ | $0.47717 | $477.17 |
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