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Vishay
SISS27DN-T1-GE3
278-SISS27DN-T1-GE3
PDF Datasheet
P-CH MOSFET 30V 50A 5.6mR PPAK 1212-8S
8 weeks
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Tech Specifications
Continuous Drain Current (ID)
50A
Drain to Source Resistance
5.6mR
Drain to Source Voltage (Vdss)
30V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
830um
Input Capacitance
5.25nF
Max Operating Temperature
150°C
SISS27DN-T1-GE3 Description
P-CH MOSFET 30V 50A 5.6mR PPAK 1212-8S
FAQ
What is SISS27DN-T1-GE3?
SISS27DN-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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