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Vishay
SISS40DN-T1-GE3
278-SISS40DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Tech Specifications
Continuous Drain Current (ID)
36.5A
Drain to Source Resistance
21.6mR
Drain to Source Voltage (Vdss)
100V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
845pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SISS40DN-T1-GE3 Description
Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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SISS40DN-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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