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Vishay

SQD40N10-25_GE3

Name: SQD40N10-25_GE3
Brand: Vishay
SKU: 278-SQD40N10-25_GE3

Manufacturer:

Vishay

ERSA Part #:

278-SQD40N10-25_GE3

Datasheet:

PDF Datasheet

Description:

Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Standard Lead Time:

20 weeks

RoHS Status:

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Tech Specifications

Package/Case

TO-252-3

Continuous Drain Current (ID)

40A

Drain to Source Resistance

25mR

Drain to Source Voltage (Vdss)

100V

Gate to Source Voltage (Vgs)

2.5V

Input Capacitance

3.38nF

Lead Free

Max Operating Temperature

175°C

SQD40N10-25_GE3 Description

Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

FAQ

SQD40N10-25_GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.