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SQJ963EP-T1_GE3
278-SQJ963EP-T1_GE3
PDF Datasheet
Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
25 weeks
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Tech Specifications
Continuous Drain Current (ID)
-8A
Drain to Source Resistance
115mR
Drain to Source Voltage (Vdss)
-60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
27W
SQJ963EP-T1_GE3 Description
Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
FAQ
What package or case is SQJ963EP-T1_GE3 available in?
SQJ963EP-T1_GE3 is available in the 3000 package / case.
What is the mounting type of SQJ963EP-T1_GE3?
What is SQJ963EP-T1_GE3?
Are there related or alternative parts for SQJ963EP-T1_GE3?
What operating temperature range does SQJ963EP-T1_GE3 support?
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