


Vishay
SUU06N10-225L
285-SUU06N10-225L
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Responsible qualityTech Specifications
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
100V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SUU06N10-225L Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FAQ
What is SUU06N10-225L?
SUU06N10-225L is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
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