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VS-GT400TH60N
297-VS-GT400TH60N
PDF Datasheet
Insulated Gate Bipolar Transistor, 530A I(C), 600V V(BR)CES,
16 weeks
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Tech Specifications
Collector Emitter Breakdown Voltage
600V
Collector-emitter Voltage-Max
2.05V
Input
Standard
Input Capacitance
30.8nF
Max Collector Current
530A
Max Power Dissipation
1.6kW
Mount
Chassis Mount
NTC Thermistor
No
VS-GT400TH60N Description
Insulated Gate Bipolar Transistor, 530A I(C), 600V V(BR)CES,
FAQ
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