Winbond Electronics Corporation_W631GG8NB12J TR
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Winbond Electronics Corporation
W631GG8NB12J TR

774-W631GG8NB12J TR
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IC DRAM 1GBIT SSTL 15 78VFBGA

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Tech Specifications

Clock Frequency
800 MHz
Memory Type
Volatile
Product Status
Active
Supplier Device Package
78-VFBGA (8x10.5)
Access Time
20 ns
Package / Case
78-VFBGA
Technology
SDRAM - DDR3
Voltage - Supply
1.425V ~ 1.575V
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W631GG8NB12J TR Description

W631GG8NB12J TR Description

The W631GG8NB12J TR is a high-performance DRAM memory IC chip manufactured by Winbond Electronics Corporation. This 1Gbit memory device is designed to deliver exceptional speed and reliability, making it suitable for a wide range of applications. It features a clock frequency of 800 MHz and an access time of 20 ns, ensuring rapid data retrieval and processing. The memory is organized as 128M x 8, providing a balanced combination of capacity and data width. The W631GG8NB12J TR operates within a supply voltage range of 1.425V to 1.575V, making it energy-efficient and compatible with modern low-power systems. The memory interface is SSTL_15, which supports high-speed data transfer and is ideal for advanced computing and networking applications.

W631GG8NB12J TR Features

  • High-Speed Performance: With a clock frequency of 800 MHz and an access time of 20 ns, the W631GG8NB12J TR ensures fast data processing and retrieval.
  • Volatile Memory: The DRAM format provides high-speed, temporary storage that is ideal for applications requiring frequent data updates.
  • Energy Efficiency: The voltage range of 1.425V to 1.575V ensures low power consumption, making it suitable for energy-sensitive applications.
  • Robust Packaging: The Tape & Reel (TR) packaging ensures reliable handling and storage, reducing the risk of damage during manufacturing and assembly.
  • Compliance and Safety: The W631GG8NB12J TR is REACH unaffected and ROHS3 compliant, ensuring environmental safety and regulatory compliance.
  • Moisture Sensitivity Level: MSL 3 (168 Hours) ensures the device can withstand moderate moisture exposure, making it suitable for various manufacturing environments.
  • Write Cycle Time: The 15ns write cycle time ensures efficient data writing, enhancing overall system performance.

W631GG8NB12J TR Applications

The W631GG8NB12J TR is ideal for applications requiring high-speed, temporary storage and frequent data updates. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and temporary storage.
  • Consumer Electronics: Suitable for high-performance gaming consoles, smart TVs, and other consumer electronics that demand rapid data handling.
  • Industrial Control Systems: Provides reliable memory solutions for industrial automation and control systems that require efficient data processing.
  • Telecommunications: Enhances the performance of telecommunication equipment by providing fast and reliable memory solutions.

Conclusion of W631GG8NB12J TR

The W631GG8NB12J TR is a high-performance DRAM memory IC chip that offers exceptional speed, reliability, and energy efficiency. Its advanced technical specifications, such as the 800 MHz clock frequency and 20 ns access time, make it a superior choice for applications requiring fast data processing and temporary storage. The device's compliance with environmental and safety standards ensures it meets the demands of modern electronics manufacturing. Whether used in networking equipment, consumer electronics, industrial control systems, or telecommunications, the W631GG8NB12J TR provides a robust and efficient memory solution.

FAQ

What operating temperature range does W631GG8NB12J TR support?
W631GG8NB12J TR has an operating temperature range of -40°C ~ 105°C (TC).
What is W631GG8NB12J TR?
What voltage specification is listed for W631GG8NB12J TR?
Are there related or alternative parts for W631GG8NB12J TR?
What is the mounting type of W631GG8NB12J TR?
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