Winbond Electronics Corporation_W638GU6QB12I TR
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Winbond Electronics Corporation
W638GU6QB12I TR

774-W638GU6QB12I TR
PDF Datasheet
8GB DDR3L 1.35V SDRAM, X16, 800M
8 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
LTB
HTS
8542.32.00.36
Automotive
No
PPAP
No
DRAM Type
DDR3L SDRAM
Chip Density (bit)
8G
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W638GU6QB12I TR Description

W638GU6QB12I TR Description

The W638GU6QB12I TR is a high-performance 8GB DDR3L 1.35V SDRAM memory IC designed by Winbond Electronics Corporation. This memory module features a clock frequency of 800 MHz and a parallel memory interface, making it suitable for applications requiring high-speed data transfer and processing. The memory is organized as 512M x 16, providing a robust memory structure for various computing tasks. The module is designed for surface mount technology, ensuring compatibility with modern PCB designs and manufacturing processes. As a volatile memory type, it offers fast access times of 20 ns and write cycle times of 15 ns for both word and page operations, ensuring efficient data handling and processing.

W638GU6QB12I TR Features

  • High-Speed Performance: With a clock frequency of 800 MHz, the W638GU6QB12I TR ensures rapid data processing and transfer, making it ideal for high-performance computing environments.
  • Volatile Memory: This DRAM module offers fast access times of 20 ns and write cycle times of 15 ns, ensuring efficient data handling and processing.
  • Memory Organization: The 512M x 16 memory organization provides a balanced structure for handling large volumes of data, making it suitable for applications requiring substantial memory capacity.
  • Surface Mount Technology: The surface mount mounting type ensures compatibility with modern PCB designs and manufacturing processes, facilitating easy integration into various electronic systems.
  • Wide Voltage Range: The module operates within a voltage range of 1.283V to 1.45V, providing flexibility and ensuring compatibility with a variety of power supply configurations.
  • Compliance and Reliability: The W638GU6QB12I TR is REACH unaffected, ensuring compliance with environmental regulations and promoting the use of sustainable materials in manufacturing.
  • Packaging: The module is packaged in tape and reel (TR), which is ideal for automated assembly processes and ensures efficient handling and storage.

W638GU6QB12I TR Applications

The W638GU6QB12I TR is ideal for a range of applications that require high-speed, high-capacity memory solutions. Some specific use cases include:

  • High-Performance Computing: The module's high clock frequency and fast access times make it suitable for applications such as data centers, servers, and high-performance computing systems where rapid data processing is critical.
  • Networking and Telecommunications: The W638GU6QB12I TR can be used in networking equipment and telecommunications infrastructure to handle large volumes of data efficiently.
  • Consumer Electronics: The module's compact design and surface mount technology make it ideal for consumer electronics such as gaming consoles, smart TVs, and other devices that require high-speed memory solutions.
  • Industrial Applications: The robust memory organization and wide voltage range make the W638GU6QB12I TR suitable for industrial applications where reliability and performance are paramount.

Conclusion of W638GU6QB12I TR

The W638GU6QB12I TR from Winbond Electronics Corporation is a high-performance, high-capacity DRAM memory IC that offers significant advantages over similar models. Its 800 MHz clock frequency, fast access times, and wide voltage range make it suitable for a variety of applications, from high-performance computing to consumer electronics. The module's surface mount technology and tape and reel packaging ensure easy integration and compatibility with modern manufacturing processes. With its robust memory organization and compliance with environmental regulations, the W638GU6QB12I TR is an ideal choice for applications requiring reliable and efficient memory solutions.

FAQ

What voltage specification is listed for W638GU6QB12I TR?
The listed voltage-related specification for W638GU6QB12I TR is 1.283.
Are there related or alternative parts for W638GU6QB12I TR?
Is W638GU6QB12I TR currently in stock?
What package or case is W638GU6QB12I TR available in?
What operating temperature range does W638GU6QB12I TR support?
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