Winbond Electronics Corporation_W66CQ2NQUAHJ TR
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Winbond Electronics Corporation
W66CQ2NQUAHJ TR

774-W66CQ2NQUAHJ TR
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IC DRAM 4GBIT LVSTL 11 200WFBGA
28 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Clock Frequency
2.133 GHz
Memory Type
Volatile
Product Status
Active
Supplier Device Package
200-WFBGA (10x14.5)
Access Time
3.5 ns
Package / Case
200-WFBGA
Technology
SDRAM - Mobile LPDDR4X
Voltage - Supply
1.06V ~ 1.17V, 1.7V ~ 1.95V
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W66CQ2NQUAHJ TR Description

W66CQ2NQUAHJ TR Description

The W66CQ2NQUAHJ TR is a high-performance DRAM memory IC chip manufactured by Winbond Electronics Corporation. This 4Gbit memory device is designed for demanding applications that require fast data access and reliable performance. The W66CQ2NQUAHJ TR features a clock frequency of 2.133 GHz, ensuring rapid data processing capabilities. It operates with a supply voltage range of 1.06V to 1.17V and 1.7V to 1.95V, making it suitable for various power-sensitive applications. The memory is organized as 128M x 32, providing a robust structure for data storage and retrieval.

W66CQ2NQUAHJ TR Features

  • High-Speed Performance: With an access time of 3.5 ns and a write cycle time of 18 ns, the W66CQ2NQUAHJ TR delivers exceptional speed and efficiency, making it ideal for high-frequency applications.
  • Volatile Memory: As a DRAM device, the memory is volatile, meaning it requires power to maintain data. This characteristic ensures that the memory can be quickly refreshed and updated, providing dynamic and flexible data handling.
  • LVSTL_11 Interface: The use of the LVSTL_11 memory interface ensures compatibility with modern systems and provides low power consumption and high signal integrity.
  • Surface Mount Technology: The surface mount mounting type allows for compact and reliable integration into various electronic systems.
  • Compliance and Reliability: The W66CQ2NQUAHJ TR is REACH unaffected and RoHS3 compliant, ensuring it meets the highest environmental and safety standards. Additionally, its moisture sensitivity level (MSL) of 3 (168 hours) makes it suitable for a wide range of manufacturing environments.
  • Packaging: The device is packaged in a 200WFBGA format and shipped on tape and reel (TR), facilitating easy handling and integration into automated assembly processes.

W66CQ2NQUAHJ TR Applications

The W66CQ2NQUAHJ TR is well-suited for a variety of applications that demand high-speed, high-density memory solutions. Its fast access times and robust memory organization make it ideal for:

  • Networking Equipment: Routers, switches, and other networking devices that require rapid data processing and storage.
  • Telecommunications: Base stations and other telecom infrastructure that need reliable and efficient memory solutions.
  • High-Performance Computing: Servers and workstations that require large amounts of fast-access memory to handle complex computations.
  • Consumer Electronics: High-end gaming consoles, digital cameras, and other devices that benefit from fast memory access and high data throughput.

Conclusion of W66CQ2NQUAHJ TR

The W66CQ2NQUAHJ TR from Winbond Electronics Corporation stands out as a reliable and high-performance DRAM memory IC chip. Its combination of fast access times, efficient power usage, and robust memory organization makes it a valuable component for a wide range of high-speed applications. The device's compliance with industry standards and its surface mount technology ensure ease of integration and long-term reliability. For applications requiring fast data access and high-density memory, the W66CQ2NQUAHJ TR is an excellent choice, offering superior performance and reliability.

FAQ

What voltage specification is listed for W66CQ2NQUAHJ TR?
The listed voltage-related specification for W66CQ2NQUAHJ TR is 1.06V ~ 1.17V, 1.7V ~ 1.95V.
What is W66CQ2NQUAHJ TR?
What operating temperature range does W66CQ2NQUAHJ TR support?
Are there related or alternative parts for W66CQ2NQUAHJ TR?
Does W66CQ2NQUAHJ TR have quantity-based pricing?
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