Wolfspeed_C3M0016120K
original

Wolfspeed
C3M0016120K

278-C3M0016120K
PDF Datasheet
SICFET N-CH 1.2KV 115A TO247-4
34 Weeks

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Tech Specifications

Configuration
Single Dual Source
Typical Turn-Off Delay Time (ns)
65
Input Capacitance (Ciss) (Max) @ Vds
6085 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
211 nC @ 15 V
Typical Rise Time (ns)
33
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
34
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C3M0016120K Description

Wolfspeed's C3M0016120K is a silicon carbide (SiC) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) module. It is designed for high-power applications and offers several advantages over traditional silicon-based MOSFETs.

Description:

The C3M0016120K is a half-bridge module that consists of two SiC MOSFETs, a common source inductor, and a gate drive circuit. The module is housed in a compact, insulated metal package that provides excellent thermal performance and allows for easy integration into power systems.

Features:

  1. High-Temperature Operation: SiC MOSFETs can operate at temperatures up to 200°C, which is significantly higher than the maximum operating temperature of silicon-based MOSFETs.
  2. High-Voltage Capability: The C3M0016120K is rated for a maximum voltage of 1200V, making it suitable for high-voltage power applications.
  3. High-Frequency Operation: SiC MOSFETs have faster switching speeds and lower switching losses than silicon MOSFETs, making them ideal for high-frequency applications.
  4. High-Efficiency: SiC MOSFETs have lower on-resistance and lower switching losses than silicon MOSFETs, resulting in higher efficiency and reduced power dissipation.
  5. Robustness: SiC MOSFETs are more resistant to short-circuits and other fault conditions than silicon MOSFETs, making them more reliable in demanding power applications.

Applications:

The C3M0016120K is suitable for a wide range of high-power applications, including:

  1. Electric Vehicle (EV) Charging Stations: The high-efficiency and high-temperature operation of SiC MOSFETs make them ideal for EV charging stations, where high power and fast charging times are required.
  2. Solar Power Inverters: SiC MOSFETs can improve the efficiency and reliability of solar power inverters, which are critical components in solar energy systems.
  3. Industrial Motor Drives: SiC MOSFETs can improve the efficiency and performance of motor drives in industrial applications, such as robotics and manufacturing equipment.
  4. Power Supplies: SiC MOSFETs can improve the efficiency and reliability of power supplies in a wide range of applications, including telecommunications, computing, and medical equipment.

Overall, the C3M0016120K is a high-performance SiC MOSFET module that offers several advantages over traditional silicon-based MOSFETs, making it an ideal choice for high-power applications that require high efficiency, high temperature operation, and high reliability.

FAQ

What operating temperature range does C3M0016120K support?
C3M0016120K has an operating temperature range of -40°C ~ 175°C (TJ).
What is the standard lead time for C3M0016120K?
What is the mounting type of C3M0016120K?
Are there related or alternative parts for C3M0016120K?
What package or case is C3M0016120K available in?
Availability (In Stock : 57 )
Quantity Unit Price Ext. Price
1+ $43.64572 $43.65
30+ $42.34285 $1270.29
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