BC846BPDW1

The BC846BPDW1 is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose amplification and switching applications. It features a maximum collector current of 100 mA and a breakdown voltage (VCEO) of up to 65 V, making it suitable for low-to-medium power circuits. The device operates with a continuous DC current gain (hFE) ranging from 250 to 630 at IC = 2 mA and VCE = 5 V, ensuring reliable amplification across varying load conditions. This transistor is housed in a compact, lead-free SOT-23 surface-mount package, which enhances thermal performance and enables efficient PCB layout in space-constrained designs. Its low saturation voltage (VCE(sat) ≈ 0.2 V at IC = 2 mA) ensures minimal power loss during switching operations, improving energy efficiency in portable electronics and battery-powered systems. Additionally, the BC846BPDW1 exhibits excellent stability over temperature and time, thanks to its robust silicon epitaxial process and precise doping control. Common applications include signal amplification in audio and sensor interfaces, logic-level shifting in digital circuits, and driver stages for LEDs or relays in consumer electronics, industrial controls, and automotive systems. It is particularly well-suited for use in low-voltage DC circuits such as those found in smart meters, remote controls, and IoT devices where small size, high reliability, and low cost are critical. The BC846BPDW1 complies with RoHS standards and supports green manufacturing practices, aligning with modern environmental regulations. Its wide operating temperature range—from -55°C to +150°C—ensures stable performance in harsh environments, including automotive and industrial automation settings. The device also offers fast switching speeds due to its optimized base-emitter capacitance and low input resistance, enabling efficient operation in high-frequency analog and mixed-signal applications. With its combination of high gain, low power consumption, and rugged construction, the BC846BPDW1 delivers consistent performance in both standard and demanding operational scenarios, making it a versatile choice for engineers seeking a reliable, cost-effective solution for discrete transistor needs.

Related Parts


Part # Manufacturer Description Availability Pricing Quantity
onsemi_BC846BPDW1T1G

BC846BPDW1T1G

Bipolar Transistor Arrays
onsemi TRAN NPN/PNP 65V 0.1A SC88/SC70
160215
10+: $0.04619
100+: $0.03708
300+: $0.03252
3000+: $0.02911
6000+: $0.02638
onsemi_SBC846BPDW1T1G

SBC846BPDW1T1G

Bipolar Transistor Arrays
onsemi TRANS NPN/PNP 65V 0.1A SOT363
80509
5+: $0.15045
50+: $0.12150
150+: $0.10910
500+: $0.09363
onsemi_SBC846BPDW1T2G

SBC846BPDW1T2G

Bipolar Transistor Arrays
onsemi TRANS NPN/PNP 65V 0.1A SOT363
19376
1+: $0.06852
10+: $0.06723
100+: $0.05567
1000+: $0.05481
onsemi_SBC846BPDW1T3G

SBC846BPDW1T3G

Bipolar (BJT)
onsemi Bipolar Transistors - BJT NPN PNP Bipolar Transistor
9833
-