NRVBS540
NRVBS540 is a high-performance silicon planar rectifier diode manufactured by onsemi, designed for efficient power conversion and robust electrical protection. It features a peak inverse voltage (PIV) rating of 50 V and a continuous forward current capability of 1 A, making it suitable for low-to-medium power applications requiring reliable rectification. The device utilizes a surface-mount technology (SMT) package, specifically the DO-214AB (SMA), which offers compact size, excellent thermal performance, and compatibility with automated assembly processes.
This diode exhibits low forward voltage drop—typically around 1.1 V at 1 A—to minimize power loss and improve system efficiency. Its fast switching characteristics and low reverse recovery time enable effective operation in high-frequency circuits such as switch-mode power supplies (SMPS), DC-DC converters, and battery charging systems. Additionally, the NRVBS540 is built to withstand surge currents up to 30 A (non-repetitive), enhancing its resilience in transient conditions like inrush current or load spikes.
The construction of the NRVBS540 includes a ruggedized silicon junction with optimized doping profiles to ensure long-term reliability under thermal stress and mechanical vibration. It complies with RoHS standards and is lead-free, supporting environmentally responsible manufacturing practices. The diode operates reliably across a wide temperature range from -55°C to +150°C, allowing use in harsh environments such as automotive electronics, industrial controls, and consumer appliances.
Common applications include power adapters, LED lighting drivers, telecom equipment, and embedded systems where space constraints and thermal management are critical. Its stable performance and consistent electrical parameters make it ideal for designs demanding high efficiency, minimal heat generation, and extended operational life. The NRVBS540 also serves as a protective component in circuits against reverse polarity and overvoltage events, adding functional versatility beyond basic rectification.