NVMFS9D6P04M8L

NVMFS9D6P04M8L is a high-performance power MOSFET manufactured by onsemi, designed for efficient switching applications in modern electronic systems. It features a low on-resistance of 4.8 mΩ at VGS = 10 V, enabling minimal conduction losses and improved energy efficiency. The device is optimized for operation with a maximum drain-source voltage (VDS) of 60 V, making it suitable for mid-voltage power management tasks such as DC-DC converters and motor drives. This MOSFET utilizes onsemi’s advanced trench technology to achieve superior thermal performance and high current handling capability, with a continuous drain current rating of up to 9 A at 25°C junction temperature. Its low gate charge (QG = 33 nC) and fast switching speed reduce switching losses, particularly beneficial in high-frequency applications like switch-mode power supplies (SMPS) and battery-powered devices. The NVMFS9D6P04M8L includes built-in protection features such as avalanche energy capability and robust gate oxide design, enhancing reliability under transient conditions. It is packaged in a compact TO-220-3L form factor, offering excellent thermal dissipation through direct mounting on heatsinks or PCBs. This package also supports easy surface-mount assembly, aligning with automated manufacturing processes. Key applications include automotive electronics—such as LED lighting, power windows, and infotainment systems—as well as industrial control systems, consumer electronics, and renewable energy inverters. Its rugged construction and wide operating temperature range from -55°C to +175°C ensure stable performance in harsh environments. The device complies with RoHS standards and is lead-free, supporting environmentally responsible design practices. With its combination of low resistance, high efficiency, and reliable performance, the NVMFS9D6P04M8L serves as an ideal solution for engineers seeking robust and scalable power management components in next-generation electronic designs.