UG4SC075006K4S

UG4SC075006K4S is a high-performance silicon carbide (SiC) Schottky barrier diode manufactured by onsemi, designed for efficient power conversion in demanding applications. It features a maximum reverse voltage rating of 650 V and a continuous forward current of 12 A, enabling robust operation under high-power conditions. The device exhibits low forward voltage drop—typically around 1.3 V at 10 A—which significantly reduces conduction losses compared to traditional silicon diodes, enhancing overall system efficiency. This diode incorporates a planar trench structure that improves thermal performance and ensures reliable operation even at elevated junction temperatures up to 175°C. Its fast switching speed and minimal reverse recovery time make it ideal for high-frequency switching applications such as DC-DC converters, inverters, and motor drives. The low leakage current and excellent avalanche ruggedness further contribute to its durability in harsh electrical environments. The UG4SC075006K4S is packaged in a compact, surface-mount TO-220-3L configuration, offering ease of integration into printed circuit boards while maintaining strong thermal dissipation capabilities. This design supports automated assembly processes, reducing manufacturing complexity and cost in mass production scenarios. It is widely used in electric vehicle (EV) charging systems, renewable energy inverters, industrial power supplies, and server power modules where high efficiency, compact size, and long-term reliability are critical. The diode’s compatibility with modern power electronics architectures makes it a preferred choice for designers seeking to reduce system size and improve energy efficiency. With onsemi’s advanced SiC technology, this component delivers superior performance in terms of power density, thermal management, and electromagnetic compatibility (EMC), making it suitable for next-generation power systems requiring stringent efficiency standards and compact form factors.