UJ3N120035K3S

The UJ3N120035K3S is a high-performance silicon carbide (SiC) MOSFET manufactured by onsemi, designed for efficient power conversion in demanding industrial and automotive applications. It features a 1200 V blocking voltage rating, enabling operation in high-voltage systems such as electric vehicle inverters, solar power converters, and industrial motor drives. The device offers low on-state resistance (RDS(on)) of typically 35 mΩ at 25°C, which minimizes conduction losses and enhances system efficiency. This SiC MOSFET is optimized for fast switching speeds, reducing switching losses and allowing higher operating frequencies compared to traditional silicon-based devices. Its robust gate oxide structure ensures reliable operation under harsh conditions, including high temperatures and electromagnetic interference. The component supports a maximum continuous drain current of 3 A at 100°C junction temperature, making it suitable for compact, high-density power modules where thermal management is critical. The UJ3N120035K3S includes an integrated anti-parallel diode with low forward voltage drop, simplifying circuit design by eliminating the need for an external freewheeling diode in many topologies. This feature contributes to reduced component count, improved reliability, and lower overall system cost. Additionally, the device is housed in a TO-247-3L package, providing excellent thermal performance through direct copper baseplate construction and compatibility with standard heatsinking solutions. It is ideal for use in high-efficiency DC-DC converters, onboard chargers for EVs, renewable energy systems, and high-power battery management units. Its ability to operate reliably at elevated temperatures—up to 175°C junction temperature—makes it well-suited for environments where space constraints and thermal stress are significant design challenges. The device also complies with automotive-grade quality standards, including AEC-Q101, ensuring long-term durability and consistent performance in safety-critical applications. With its combination of high voltage capability, low conduction and switching losses, and ruggedized design, the UJ3N120035K3S delivers a compelling solution for next-generation power electronics where efficiency, size, and reliability are paramount.