STD45P4LLF6AG

STD45P4LLF6AG is a high-performance power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in modern electronic systems. It features a low on-resistance of 3.8 mΩ (typical) at VGS = 10 V, enabling minimal conduction losses and high energy efficiency—ideal for power conversion and management circuits. The device operates with a maximum drain-source voltage (VDS) of 45 V, allowing it to handle moderate voltage levels commonly found in automotive, industrial, and consumer electronics. This N-channel enhancement-mode MOSFET utilizes advanced trench technology to optimize gate charge (QG ≈ 175 nC) and reduce switching losses, making it suitable for high-frequency operation up to several hundred kHz. Its robust construction supports a continuous drain current (ID) of 210 A at 25°C junction temperature, ensuring reliable performance under heavy load conditions. Additionally, the device includes an integrated body diode with fast recovery characteristics, enhancing system reliability in inductive load applications such as motor drives and DC-DC converters. The STD45P4LLF6AG is packaged in a compact, thermally efficient TO-220AB form factor, facilitating easy mounting and heat dissipation in space-constrained designs. It is fully compatible with standard PCB assembly processes and offers excellent thermal performance due to its low thermal resistance (RθJC ≈ 0.2 °C/W), which helps maintain stable operating temperatures even under sustained load. Common applications include battery-powered devices, power supplies, motor control circuits, and onboard chargers in electric vehicles. Its high current capability and low RDS(on) make it particularly effective in buck converters, synchronous rectification stages, and other power management solutions where efficiency and compactness are critical. The device also meets stringent safety and environmental standards, including compliance with RoHS and REACH regulations, ensuring safe and sustainable use in global markets. Engineered for reliability, the STD45P4LLF6AG provides protection against avalanche breakdown and short-circuit events through its rugged silicon process and optimized structure. This makes it well-suited for harsh environments such as industrial automation, renewable energy systems, and automotive electronics, where durability and consistent performance are essential.