STH275N8F7-6AG

STH275N8F7-6AG is a high-performance N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power management in demanding applications. It features a low on-resistance of 1.3 mΩ at VGS = 10 V, enabling minimal conduction losses and high energy efficiency. The device operates with a maximum drain-source voltage (VDS) of 80 V, making it suitable for high-voltage switching circuits. Its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, ensuring reliable turn-on behavior even under low gate drive conditions. The transistor is constructed using advanced trench technology, which enhances thermal performance and reduces switching losses. It supports a continuous drain current (ID) of up to 275 A at 25°C junction temperature, allowing it to handle heavy load conditions without degradation. With a total gate charge (QG) of just 240 nC, the STH275N8F7-6AG enables fast switching speeds, minimizing switching time and reducing electromagnetic interference (EMI). This MOSFET is packaged in a TO-247-3L configuration, offering excellent thermal dissipation through a directly bonded copper tab that ensures low thermal resistance (Rth(j-c) = 0.09 °C/W). The package design also facilitates easy mounting on heat sinks and compatibility with standard PCB layouts. It includes built-in protection against avalanche breakdown and safe operating area (SOA) limits, enhancing reliability in transient or fault conditions. Applications include industrial motor drives, DC-DC converters, battery management systems, and renewable energy inverters such as solar and wind power systems. Its robust design makes it ideal for use in electric vehicles (EVs), where high current handling, thermal stability, and fast switching are critical for inverter and onboard charger modules. Additionally, it is well-suited for server power supplies and high-efficiency power supplies in consumer electronics due to its low RDS(on) and high current capability. The STH275N8F7-6AG complies with RoHS standards and is fully lead-free, meeting environmental and safety regulations for modern electronic manufacturing. Its consistent performance across wide temperature ranges—from -55°C to +175°C—ensures stable operation in harsh environments. This combination of electrical efficiency, thermal robustness, and rugged packaging positions the device as a preferred choice for engineers seeking high-reliability solutions in power electronics.