STTD6050H-12M2Y

STTD6050H-12M2Y is a high-performance power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in modern power management systems. This device features a drain-source voltage rating of 60 V and a continuous drain current of up to 50 A, making it suitable for demanding load conditions where robustness and thermal stability are critical. The low on-resistance (RDS(on) typically 4.5 mΩ at VGS = 10 V) ensures minimal conduction losses, enhancing system efficiency—particularly beneficial in energy-sensitive environments such as industrial motor drives, battery-powered tools, and DC-DC converters. The component utilizes advanced trench MOS technology, which improves gate charge characteristics and reduces switching losses, enabling higher switching frequencies without compromising reliability. Its optimized layout supports efficient heat dissipation through a direct copper clip (DCC) package structure, allowing the device to operate reliably under high thermal stress while maintaining long-term performance. Additionally, the integrated body diode offers fast recovery characteristics, reducing reverse recovery time and minimizing electromagnetic interference (EMI) in high-frequency circuits. This MOSFET is well-suited for use in automotive electronics, including electric vehicle (EV) charging systems, onboard DC-DC converters, and powertrain control units, due to its rugged design and compliance with AEC-Q101 standards. It also finds application in consumer electronics like power supplies, uninterruptible power supplies (UPS), and LED lighting drivers, where compact size, high efficiency, and reliable operation are essential. The device’s ability to handle surge currents and its built-in protection against avalanche breakdown make it ideal for transient-rich environments. Packaged in a TO-247-3L configuration, the STTD6050H-12M2Y provides excellent mechanical robustness and ease of integration into PCB designs. Its compatibility with standard surface-mount assembly processes simplifies manufacturing and reduces overall system cost. Furthermore, the device operates across a wide temperature range from -55°C to +175°C, ensuring consistent performance in both extreme cold and hot operating conditions. With its combination of high current capability, low resistance, and thermal efficiency, this MOSFET delivers a compelling solution for designers seeking to improve power density and reduce energy loss in next-generation electronic systems.