TN1605H-6G

TN1605H-6G is a high-performance power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in modern power conversion systems. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of up to 16 A at 25°C, making it suitable for demanding power management tasks. The device exhibits a low on-resistance (RDS(on)) of just 4.5 mΩ at VGS = 10 V, which minimizes conduction losses and improves overall system efficiency—particularly critical in high-frequency switching environments. This MOSFET utilizes ST’s advanced TrenchMOS™ technology, enabling superior gate charge characteristics and fast switching speeds. Its optimized gate threshold voltage (VGS(th)) range ensures stable operation across varying temperature and load conditions, while the low gate charge (Qg) reduces switching energy loss and enhances performance in high-frequency converters such as DC-DC buck regulators and motor drives. The TN1605H-6G is housed in a TO-220-3L package, offering robust mechanical and thermal performance with an excellent junction-to-case thermal resistance (Rth(j-c)). This packaging facilitates easy integration into printed circuit boards and supports effective heat dissipation, essential for reliable long-term operation in industrial and automotive applications. It is commonly employed in applications requiring high efficiency and compact design, including power supplies for consumer electronics, LED lighting drivers, battery-powered devices, and electric vehicle charging systems. Its rugged construction and comprehensive protection against avalanche breakdown make it ideal for use in harsh environments where reliability and safety are paramount. The device also meets stringent industry standards, including RoHS compliance and offers enhanced EMI performance due to its low parasitic inductance structure. These features ensure compatibility with modern electromagnetic compatibility (EMC) requirements in both consumer and industrial settings.