TN4050HP-12L2Y

TN4050HP-12L2Y is a high-performance power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in demanding industrial and consumer electronics environments. It features a maximum drain-source voltage (VDS) of 60 V, enabling reliable operation in high-voltage circuits while maintaining low conduction losses. The device exhibits a very low on-resistance (RDS(on) = 3.8 mΩ at VGS = 10 V), which significantly reduces power dissipation and improves system efficiency—particularly beneficial in high-current applications such as motor drives and DC-DC converters. This MOSFET utilizes ST’s advanced trench technology to optimize the trade-off between gate charge (Qg ≈ 79 nC) and on-resistance, resulting in fast switching speeds and minimal switching losses. Its robust construction supports continuous drain current (ID) of up to 50 A at 25°C junction temperature, making it suitable for power-intensive tasks. Additionally, the device includes an integrated body diode with low forward voltage drop, enhancing performance in synchronous rectification and freewheeling applications. The TN4050HP-12L2Y is packaged in a TO-220-3L form factor, offering excellent thermal performance through direct mounting on heatsinks and compatibility with standard PCB layouts. This package design ensures mechanical reliability and ease of integration into existing power systems. The device also meets stringent safety standards, including compliance with RoHS and REACH regulations, and is qualified for automotive-grade applications under AEC-Q101. Common applications include power supplies for servers, industrial automation equipment, battery management systems, and electric vehicle chargers. Its high efficiency and thermal stability make it ideal for use in compact, high-density power modules where space and heat dissipation are critical constraints. The device’s ability to handle high surge currents and operate reliably under transient conditions further extends its utility in harsh electrical environments.