TN4050HP-12WY

TN4050HP-12WY is a high-performance power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in power conversion and management systems. It features a maximum drain-source voltage (VDS) of 60 V, enabling reliable operation in a wide range of voltage conditions. The device offers a low on-resistance (RDS(on)) of typically 3.5 mΩ at VGS = 10 V, which minimizes conduction losses and enhances energy efficiency—particularly beneficial in high-current applications such as DC-DC converters and motor drives. This MOSFET utilizes advanced trench technology to optimize charge carrier mobility and reduce switching losses, making it ideal for high-frequency operations. Its gate threshold voltage (VGS(th)) ranges from 1.0 to 2.5 V, allowing compatibility with low-voltage control circuits like microcontrollers and PWM drivers. The device also supports fast switching speeds due to its low gate charge (Qg), ensuring minimal switching delays and improved system responsiveness. Packaged in a compact TO-220-3L format, TN4050HP-12WY provides excellent thermal performance and mechanical robustness, suitable for industrial and automotive environments. The package design facilitates easy mounting on printed circuit boards and enables effective heat dissipation through the exposed tab, reducing thermal resistance and enhancing long-term reliability. Common applications include power supplies for consumer electronics, battery-powered devices, LED lighting drivers, and motor control systems in robotics or automation equipment. Its rugged construction and high current capability (ID = 87 A at Tc = 25°C) make it well-suited for demanding environments where stability and durability are critical. Additionally, the device complies with RoHS standards, reflecting STMicroelectronics’ commitment to environmentally responsible manufacturing practices. The TN4050HP-12WY integrates protection against avalanche breakdown and operates reliably under transient overloads, offering a safety margin in real-world operating conditions. With its combination of low RDS(on), high current handling, and efficient thermal characteristics, this MOSFET delivers an optimal balance between performance and cost-effectiveness in modern power electronics designs.