The Battery Input Protection module is a critical component within the Body Electronics & Lighting system of modern Automotive Electronics. It serves as a safeguard for the vehicle's electrical system by protecting the battery and connected modules from voltage surges, reverse polarity, and overcurrent conditions. This module ensures the stability and reliability of the vehicle’s power supply, preventing damage to sensitive electronic components.
Typically found in Door / Trunk / Window Modules, the Battery Input Protection unit plays a key role in maintaining safe and efficient operation of various body control systems. It is designed to handle fluctuating power inputs, especially during engine start-up or when using high-power accessories. By regulating the flow of electrical current, it enhances the longevity of the vehicle’s electrical architecture.
This technology is widely used in passenger cars, commercial vehicles, and electric vehicles (EVs), where reliable power management is essential. It supports features such as automatic window operation, door locks, and lighting systems, ensuring smooth functionality under all driving conditions. With the increasing complexity of automotive electronics, the Battery Input Protection module has become an indispensable part of modern vehicle design, contributing to improved safety, performance, and durability.
Series Name | Description | Manufacturer Name | Attribute Description |
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onsemi | 1/4-inch CMOS image sensor, 1.3MP resolution, 720p HD video at 60fps, low power consumption, embedded low-power pixel technology, supports SCCB interface, designed for surveillance and IoT applications. | ||
onsemi | 40V, 14A, 4.5mΩ (typ) RDS(on), P-channel MOSFET, 1.8V logic level compatible, 2.5W power dissipation, SOT-23 package, suitable for power management and load switching. | ||
onsemi | 40V, 25A, 8.5mΩ, P-channel MOSFET, 1.8V logic level, TO-252 package, low RDS(on), high efficiency for power management applications. | ||
onsemi | 40V, 2.5A P-channel power MOSFET, 8mΩ RDS(on), 1.8V logic level compatible, 1.2mm x 1.2mm WDFN package, suitable for load switch and power management applications. | ||
onsemi | 1200V, 40A, SiC MOSFET, TO-247-4L package, low gate resistance, high switching frequency, suitable for high-efficiency power systems. | ||
onsemi | Schottky diode, 60V VRRM, 1A IO, 300mV VF max @ 1A, 2ns reverse recovery, surface mount, SOD-123FL package, operating junction temperature -65°C to +125°C. | ||
onsemi | Forward Voltage: 0.5V, Reverse Voltage: 40V, Average Rectified Current: 1A, Package: SOD-123, Operating Temperature: -55°C to +150°C, Fast Switching, Low Leakage Current | ||
onsemi | 100V, 1A Schottky barrier rectifier, low forward voltage, surface mount, high efficiency, fast switching, suitable for power rectification and reverse polarity protection. | ||
onsemi | 50V, 500mA Schottky barrier diode, VF = 0.44V (typ), IF = 500mA, SOD-123FL package, low forward voltage, high efficiency, suitable for power rectification and reverse polarity protection. | ||
onsemi | Schottky diode, 40V, 1A, 350mV forward voltage, 2ns reverse recovery time, low leakage current, surface mount SMB package. |