German
Japanese
Portuguese
Korea
Mexico
Dutch
RF FETs, MOSFETs
(72 results)RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
 ATF-34143-TR1RF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 145mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 6849 | - | |
ATF-54143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | 27903 | - | |
ATF-55143-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, SC-70, 4 PIN | In Stock | - | |
 ATF-551M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 | 4507 | - | |
ATF-34143-TR1GRF FETs, MOSFETs | Broadcom | RF FET N-CH 5.5V 0.145A SOT-343 Surface Mount Transistor | 34074 | - | |
ATF-54143-TR1GRF FETs, MOSFETs | Broadcom | GaAs RF FET, 2GHz, 16.6dB Gain, 0.5dB NF, 5V Vdss, SOT-343 | 27466 | - | |
ATF-55143-TR1GRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 5V, 100mA, 0.6dB NF, GaAs, SOT-343 | 47279 | - | |
 ATF-531P8-BLKRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 7V, 300mA, 20dB Gain, 0.6dB NF, GaAs, LCC-8 | 3247 | - | |
 ATF-501P8-BLKRF FETs, MOSFETs | Broadcom | RF FET, 2GHz, 7V, 1A, 15dB Gain, GaAs, LPCC-8 | 3761 | - | |
ATF-541M4-BLKRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 | In Stock | - | |
 ATF-36163-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 6 PIN | 24790 | - | |
 ATF-36077-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | In Stock | - | |
ATF-53189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE PACKAGE-3 | 21064 | - | |
 ATF-531P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 | 3388 | - | |
ATF-541M4-TR1RF FETs, MOSFETs | Broadcom | 2GHz RF FET, N-Channel, 120mA ID, 5V Vdss, 0.5dB NF, GaAs, SMT | 64 | - | |
ATF-331M4-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, MINIPAK-4 | 3013 | - | |
ATF-35143-TR1GRF FETs, MOSFETs | Broadcom | Trans FET N-CH 5.5V 80mA pHEMT 4-Pin(3+Tab) SOT-343 T/R | 13691 | - | |
 ATF-50189-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, LEAD FREE PACKAGE-3 | 2550 | - | |
ATF-33143-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN | 8408 | - | |
ATF-501P8-TR1RF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 | In Stock | - | |
ATF-511P8-TR1RF FETs, MOSFETs | Broadcom | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 | 7685 | - | |
 VMMK-1218-BLKGRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3 | 816 | - | |
 VMMK-1218-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3 | 808 | - | |
 VMMK-1225-BLKGRF FETs, MOSFETs | Broadcom | RF FET, GaAs, 12GHz, 5V, 1dB NF, 11dB Gain, SMD | 4227 | - | |
VMMK-1225-TR1GRF FETs, MOSFETs | Broadcom | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, 1.05 X 0.55MM, 0.25MM HEIGHT, SUBMINIATURE, LEADLESS PACKAGE-3 | In Stock | - |
.png?x-oss-process=image/format,webp/resize,h_32)
