Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
GA35XCP12-247Single IGBTs | GeneSiC Semiconductor | IGBT 1200V SOT247 | In Stock | - |
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