Single IGBTs

(106 results)

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Part # Manufacturer Description Availability Pricing Quantity
Harris Corporation_HGT1S7N60B3DS

HGT1S7N60B3DS

Single IGBTs
Harris Corporation 14 A, 600 V, UFS N-CHANNEL IGBT
8010
-
Harris Corporation_HGT1S3N60B3DS

HGT1S3N60B3DS

Single IGBTs
Harris Corporation 7A, 600V, UFS N-CHANNEL IGBT
In Stock
-
Harris Corporation_HGTH12N40E1D

HGTH12N40E1D

Single IGBTs
Harris Corporation 12A, 400V, N-CHANNEL IGBT / IGBT 400 V 12 A 75 W Through Hole TO-218 Isolated
In Stock
-
Harris Corporation_HGTD7N60C3S

HGTD7N60C3S

Single IGBTs
Harris Corporation 600 V, 14 A, N-CHANNEL IGBT
8408
-
Harris Corporation_TA13294A

TA13294A

Single IGBTs
Harris Corporation
In Stock
-
Harris Corporation_TA11106DA7

TA11106DA7

Single IGBTs
Harris Corporation
In Stock
-