Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
APT15GT60KRGSingle IGBTs | Microsemi | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | In Stock | - | |
APT95GR65JDU60Single IGBTs | Microsemi | INSULATED GATE BIPOLAR TRANSISTO | In Stock | - | |
APT70GR65B2SCD30Single IGBTs | Microsemi | INSULATED GATE BIPOLAR TRANSISTO | In Stock | - | |
APT30GS60KRGSingle IGBTs | Microsemi | Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220 | In Stock | - | |
APT30GT60KRSingle IGBTs | Microsemi | IGBT 600V 64A 250W TO220 | In Stock | - | |
APT50GF120B2RSingle IGBTs | Microsemi | IGBT 1200V 135A 781W TMAX | In Stock | - | |
APT30GP60BDQ1Single IGBTs | Microsemi | IGBT 600V 100A 463W TO247 | 7621 | - | |
APT50GP60B2DQ2Single IGBTs | Microsemi | Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) T-MAX | 4507 | - | |
APT15GP90BDF1Single IGBTs | Microsemi | Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel | 8011 | - | |
APT11GF120BRDQ1Single IGBTs | Microsemi | IGBT 1200V 25A 156W TO247 | 11116 | - | |
APT15GP90KGSingle IGBTs | Microsemi | Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | In Stock | - | |
APT15GN120KGSingle IGBTs | Microsemi | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | In Stock | - | |
APT20GF120BRDQ1GSingle IGBTs | Microsemi | IGBT 1200V 36A 200W TO247 | In Stock | - |