Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
2SC3518Single Bipolar Transistors | NEC Corporation | 8295 | - | ||
UPA500TSingle Bipolar Transistors | NEC Corporation | 10906 | - | ||
2SA1615-ZSingle Bipolar Transistors | NEC Corporation | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 4246 | - | |
FN4A4P-T1BSingle Bipolar Transistors | NEC Corporation | 3007 | - | ||
NESG210833-T1BSingle Bipolar Transistors | NEC Corporation | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) | 1324 | - | |
2SC3478ASingle Bipolar Transistors | NEC Corporation | NPN SILICON TRANSISTORS | 9001 | - | |
2SA1650Single Bipolar Transistors | NEC Corporation | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 8913 | - | |
UPA500T-T1Single Bipolar Transistors | NEC Corporation | 3451 | - | ||
2SD2164Single Bipolar Transistors | NEC Corporation | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING | 8802 | - | |
UPA2003CSingle Bipolar Transistors | NEC Corporation | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY | 20113 | - | |
UPA1436AHSingle Bipolar Transistors | NEC Corporation | NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | 2790 | - | |
2SC4570-T1Single Bipolar Transistors | NEC Corporation | NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | 3013 | - | |
UPA1428AH(1)Single Bipolar Transistors | NEC Corporation | In Stock | - | ||
2SC4815Single Bipolar Transistors | NEC Corporation | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 12008 | - | |
2SA1396Single Bipolar Transistors | NEC Corporation | PNP SILICON POWER TRANSISTOR | 1941 | - | |
2SD1694Single Bipolar Transistors | NEC Corporation | NPN SILICON POWER TRANSISTOR | 8698 | - | |
2SC5507Single Bipolar Transistors | NEC Corporation | NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD | In Stock | - | |
2SD1286-ZSingle Bipolar Transistors | NEC Corporation | NPN SILICON EPITAXIAL TRANSISTOR MP-3 | 3209 | - | |
2SA1615Single Bipolar Transistors | NEC Corporation | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 4595 | - | |
2SD985Single Bipolar Transistors | NEC Corporation | NPN SILICON DARLINGTON POWER TRANSISTORS | 7014 | - | |
FN1F4MSingle Bipolar Transistors | NEC Corporation | MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD | 21609 | - | |
2SA984KESingle Bipolar Transistors | NEC Corporation | In Stock | - | ||
2SA1741Single Bipolar Transistors | NEC Corporation | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | 5325 | - | |
UPA1434HSingle Bipolar Transistors | NEC Corporation | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE | 3206 | - | |
AA1A4MSingle Bipolar Transistors | NEC Corporation | NPN SILICON TRANSISTOR | 31008 | - |