Memory is a semiconductor device that is used as data storage device on an integrated circuit. These devices are available in several formats CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM, and SRAM in either Non-Volatile or Volatile. These devices memory sizes range from 64 b to 6 Tb with the interface being I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus, and 1-Wire.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
K6X1008T2D-PF70Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 70ns, CMOS, PDSO32 | In Stock | - | |
K4S641632H-UC70Memory ICs Products | SAMSUNG | 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) | In Stock | - | |
K4S161622H-TC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | 52001 | - | |
K6R1016V1D-EC10Memory ICs Products | SAMSUNG | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). | In Stock | - | |
K4S641632H-TC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 42602 | - | |
K4S643232E-TC50Memory ICs Products | SAMSUNG | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | In Stock | - | |
K4R441869B-MCK8Memory ICs Products | SAMSUNG | 256K x 16/18 bit x 32s banks Direct RDRAMTM | In Stock | - | |
K6X1008T2D-BF70Memory ICs Products | SAMSUNG | 722 | - | ||
K4T1G164QF-BCE7Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 20474 | - | |
K6R1008V1D-UC10Memory ICs Products | SAMSUNG | 17004 | - | ||
K4D551638F-TC40Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, CMOS, PDSO66, | In Stock | - | |
K6T4008U1C-VF85Memory ICs Products | SAMSUNG | Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 | In Stock | - | |
K4D261638F-TC33Memory ICs Products | SAMSUNG | In Stock | - | ||
K4S561632E-TL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | 5370 | - | |
K4B2G1646Q-BCMAMemory ICs Products | SAMSUNG | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V | 67604 | - | |
K4B1G1646G-BCK0Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96 | 8205 | - | |
KMI8X000MM-B606Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 2263 | - | |
K9F4G08U0D-SCB0Memory ICs Products | SAMSUNG | SLC NAND Flash Serial 3.3V 4G-bit 512M x 8 25ns 48-Pin TSOP-I | 6342 | - | |
KFW4G16Q2M-DEB5Memory ICs Products | SAMSUNG | Flash, 256MX16, 14.5ns, PBGA63 | 1013 | - | |
K5D1H13ACM-D075Memory ICs Products | SAMSUNG | MCP 1G NAND/512M SDRAM | 73 | - | |
KMQ31000SM-B417Memory ICs Products | SAMSUNG | eMCP eMMC + DRam | 1692 | - | |
61759\K6R1016V1D-TC10T00Memory ICs Products | SAMSUNG | SRAM 64Kx16-10 3.3V TSOP | In Stock | - | |
K6X4016T3F-TB55Memory ICs Products | SAMSUNG | SRAM 256kx16 Low Pwr Low Voltage | In Stock | - | |
K7A403609B-QC25Memory ICs Products | SAMSUNG | Cache SRAM, 128KX36, 2.4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | 458 | - | |
K6R1008V1D-JC08Memory ICs Products | SAMSUNG | Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 | In Stock | - |