Memory is a semiconductor device that is used as data storage device on an integrated circuit. These devices are available in several formats CBRAM, DRAM, EEPROM, EERAM, EPROM, Flash, FRAM, NVSRAM, PCM (PRAM), PSRAM, RAM, and SRAM in either Non-Volatile or Volatile. These devices memory sizes range from 64 b to 6 Tb with the interface being I2C, MMC, Parallel, eMMC, Serial, Single Wire, SPI, UFS, Xccela Bus, and 1-Wire.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
K4E641612E-TC50Memory ICs Products | SAMSUNG | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | In Stock | - | |
K4T1G164QE-HCE7Memory ICs Products | SAMSUNG | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | 31919 | - | |
K4H561638N-LCB3Memory ICs Products | SAMSUNG | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 8578 | - | |
K4H510838D-UCCCMemory ICs Products | SAMSUNG | DDR DRAM, 64MX8, 0.65ns, CMOS, PDSO66, | 6001 | - | |
K521H57ACA-B050Memory ICs Products | SAMSUNG | 866 | - | ||
K4S28163LD-BL75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, CSP-54 | In Stock | - | |
K4S561632J-UC60Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, | 18806 | - | |
K4E641611C-TC60Memory ICs Products | SAMSUNG | In Stock | - | ||
K4M563233D-EE1HMemory ICs Products | SAMSUNG | In Stock | - | ||
K6F1616R6A-EF70Memory ICs Products | SAMSUNG | In Stock | - | ||
K4U52324QE-BC08Memory ICs Products | SAMSUNG | 702 | - | ||
K4S561633C-RN75Memory ICs Products | SAMSUNG | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, CSP-54 | In Stock | - | |
K524G2GACH-B050Memory ICs Products | SAMSUNG | 25 | - | ||
K3N5C118DE-GC12Y00Memory ICs Products | SAMSUNG | In Stock | - | ||
K4T28163QP-BCE7Memory ICs Products | SAMSUNG | In Stock | - | ||
K4B2G3146G-MQH9Memory ICs Products | SAMSUNG | 1122 | - | ||
K5N5629ATC-BQ12Memory ICs Products | SAMSUNG | 9012 | - | ||
K4D263238I-QC50Memory ICs Products | SAMSUNG | In Stock | - | ||
K4H561638F-ZCB3Memory ICs Products | SAMSUNG | 1933 | - | ||
K1S321615M-EE10Memory ICs Products | SAMSUNG | 2Mx16 bit Uni-Transistor Random Access Memory | 4714 | - | |
K4S281632O-LC75Memory ICs Products | SAMSUNG | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, | In Stock | - | |
K4B2G1646E-BCMAMemory ICs Products | SAMSUNG | In Stock | - | ||
K9F1G08U0E-SIB0Memory ICs Products | SAMSUNG | 17113 | - | ||
K7N163631B-PC25Memory ICs Products | SAMSUNG | ZBT SRAM, 512KX36, 2.6ns, CMOS, PQFP100 | 9005 | - | |
K4A4G085WF-BCWEMemory ICs Products | SAMSUNG | DDR4-3200 512Mx8 (4Gb) | 1612 | - |