FETs, MOSFETs

(33 results)

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies. Metal oxide semiconductor field effect transistors, or MOSFETs, are a type of FET.

Part # Manufacturer Description Availability Pricing Quantity
STMicroelectronics_STGH50H65B2-7AG

STGH50H65B2-7AG

FETs, MOSFETs
STMicroelectronics Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 package
In Stock
-
STMicroelectronics_SCT018W65G3AG

SCT018W65G3AG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247 package
In Stock
-
STMicroelectronics_SCT014TO65G3

SCT014TO65G3

FETs, MOSFETs
STMicroelectronics Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
In Stock
-
STMicroelectronics_STGWA80H65FBAG

STGWA80H65FBAG

FETs, MOSFETs
STMicroelectronics Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
In Stock
-
STMicroelectronics_SCT040W65G3AG

SCT040W65G3AG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247 package
In Stock
-
STMicroelectronics_SCT018HU65G3AG

SCT018HU65G3AG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A in an HU3PAK package
In Stock
-
STMicroelectronics_SCT045W17KAG

SCT045W17KAG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mOhm typ., 48 A in an HiP247 package
In Stock
-
STMicroelectronics_SCT025W120G3-4

SCT025W120G3-4

FETs, MOSFETs
STMicroelectronics Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
In Stock
-