Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies. Metal oxide semiconductor field effect transistors, or MOSFETs, are a type of FET.
Part # | Manufacturer | Description | Availability | Pricing | Quantity |
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![]() STGH50H65B2-7AGFETs, MOSFETs | STMicroelectronics | Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT in an H2PAK-7 package | In Stock | - | |
![]() SCT018W65G3AGFETs, MOSFETs | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247 package | In Stock | - | |
![]() SCT014TO65G3FETs, MOSFETs | STMicroelectronics | Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package | In Stock | - | |
![]() STGWA80H65FBAGFETs, MOSFETs | STMicroelectronics | Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads | In Stock | - | |
![]() SCT040W65G3AGFETs, MOSFETs | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247 package | In Stock | - | |
![]() SCT018HU65G3AGFETs, MOSFETs | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A in an HU3PAK package | In Stock | - | |
![]() SCT045W17KAGFETs, MOSFETs | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mOhm typ., 48 A in an HiP247 package | In Stock | - | |
![]() SCT025W120G3-4FETs, MOSFETs | STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package | In Stock | - |