FETs, MOSFETs

(33 results)

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies. Metal oxide semiconductor field effect transistors, or MOSFETs, are a type of FET.

Part # Manufacturer Description Availability Pricing Quantity
STMicroelectronics_STGWA80H65FBAG

STGWA80H65FBAG

FETs, MOSFETs
STMicroelectronics Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads
In Stock
-
STMicroelectronics_SCT040W65G3AG

SCT040W65G3AG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247 package
In Stock
-
STMicroelectronics_SCT018HU65G3AG

SCT018HU65G3AG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mOhm typ., 60 A in an HU3PAK package
In Stock
-
STMicroelectronics_STGST200G65DTAG

STGST200G65DTAG

FETs, MOSFETs
STMicroelectronics Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package
In Stock
-
STMicroelectronics_SCT045W17KAG

SCT045W17KAG

FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mOhm typ., 48 A in an HiP247 package
In Stock
-
STMicroelectronics_SCT025W120G3-4

SCT025W120G3-4

FETs, MOSFETs
STMicroelectronics Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
In Stock
-
STMicroelectronics_STB5N80K

STB5N80K

FETs, MOSFETs
STMicroelectronics 800V 4A 60W 4V 1 N-Channel ROHS
In Stock
-
STMicroelectronics_FH13N60K

FH13N60K

FETs, MOSFETs
STMicroelectronics 600V 11A 380mΩ@10V 25W 4V@250uA 1 N-Channel TO-220FP ROHS
In Stock
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