Uncategorized.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
TSC2022IDTUnclassified | STMicroelectronics | STMicroelectronics 100 V, precision, bidirectional current sense amplifier | In Stock | - | |
SCT040H120G3-7Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package | In Stock | - | |
SCT012W90G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package | In Stock | - | |
SCT029H75G3AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 750 V, 29 mOhm typ., 60 A in an H2PAK-7 package | In Stock | - | |
STHU60N046DM9AGUnclassified | STMicroelectronics | Automotive-grade N-channel 600 V, 37 mOhm typ., 54 A MDmesh DM9 Power MOSFET in an HU3PAK package | In Stock | - | |
STGST200G65DFAGUnclassified | STMicroelectronics | Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package | In Stock | - | |
STH8N120K5-2AGUnclassified | STMicroelectronics | Automotive-grade N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in an H2PAK-2 package | In Stock | - | |
STGFW50HP65FB2Unclassified | STMicroelectronics | Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-3PF package | In Stock | - | |
STH65N050DM9-7AGUnclassified | STMicroelectronics | Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET in an H2PAK-7 package | In Stock | - | |
ST33KTPM2X32DKJ1Unclassified | STMicroelectronics | TPM 2.0 device for Consumer | In Stock | - | |
ST33HTPH2E32AHC2Unclassified | STMicroelectronics | Trusted Platform Module 1.2 & 2.0 with TCG I2C interface | In Stock | - | |
SCT040W120G3Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package | In Stock | - | |
SCTWA60N12G2-4AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package | In Stock | - | |
SCT040H65G3SAGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package | In Stock | - | |
A2387DTRUnclassified | STMicroelectronics | 150 V half-bridge gate driver for automotive applications | In Stock | - | |
SCTH100N120G2-AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an H2PAK-7 package | In Stock | - | |
STDRIVE102BHTRUnclassified | STMicroelectronics | Triple half-bridge gate driver with programmable currents | In Stock | - | |
SCT027TO65G3Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package | In Stock | - | |
SCT1000N170AGUnclassified | STMicroelectronics | Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package | In Stock | - | |
SCT040H65G3-7Unclassified | STMicroelectronics | Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package | In Stock | - | |
STK615N4F8AGUnclassified | STMicroelectronics | Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET in a PowerLeaded 8x8 package | In Stock | - | |
STO450N6F7Unclassified | STMicroelectronics | N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET in a TO-LL package | In Stock | - | |
STL160N6LF7Unclassified | STMicroelectronics | N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | In Stock | - | |
SCTWA70N120G2VUnclassified | STMicroelectronics | Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package | In Stock | - | |
TSL6904IQ4TUnclassified | STMicroelectronics | Very high accuracy (12 µV) zero drift micropower 5 V cost-effective operational amplifiers | In Stock | - |