Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
LM3046M/NOPBBipolar RF Transistors | Texas Instruments | 5-Element NPN RF Transistor Array, 120MHz, 15V, SOIC | 6393 | - | |
LM3046MX/NOPBBipolar RF Transistors | Texas Instruments | Transistor Array 14-SOIC -40 to 85 | 6329 | - | |
LM3046MBipolar RF Transistors | Texas Instruments | Transistor Array 14-SOIC -40 to 85 | 6718 | - | |
LM3046MXBipolar RF Transistors | Texas Instruments | 5-Ch NPN RF Transistor Array, 120MHz, 15V, SOIC, 50mA | 6297 | - |