BYTe Semiconductor_BY25Q128ESSIG(R)
BYTe Semiconductor_BY25Q128ESSIG(R)
original

BYTe Semiconductor
BY25Q128ESSIG(R)

774-BY25Q128ESSIG(R)
PDF Datasheet
128 MBIT, 3.0V (2.7V TO 3.6V), -
4 Weeks

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Tech Specifications

Clock Frequency
120 MHz
Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
SPI - Quad I/O
Memory Organization
16M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Active
Supplier Device Package
8-SOP
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BY25Q128ESSIG(R) Description

BY25Q128ESSIG(R) Description

The BY25Q128ESSIG(R) is a high-performance, 128 Mbit Flash memory IC designed by BYTe Semiconductor. This memory IC is optimized for applications requiring fast data access and reliable storage. With a memory organization of 16M x 8, it offers a substantial storage capacity in a compact form factor. The device operates within a supply voltage range of 2.7V to 3.6V, making it suitable for a variety of power-sensitive applications. The BY25Q128ESSIG(R) features a clock frequency of 120 MHz, ensuring rapid data transfer rates and efficient performance. Its access time of 7.5 ns and write cycle times of 60µs for a word and 2.4ms for a page further enhance its speed and efficiency. The device is packaged in a surface mount format, specifically in tape and reel (TR), which is ideal for automated assembly processes. It is also REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance. With a moisture sensitivity level (MSL) of 3 (168 hours), the BY25Q128ESSIG(R) is well-suited for use in various industrial and consumer electronics environments.

BY25Q128ESSIG(R) Features

  • High-Speed Performance: The BY25Q128ESSIG(R) boasts a clock frequency of 120 MHz, providing fast data access and transfer capabilities. This high-speed performance is complemented by an access time of 7.5 ns, ensuring quick response times for data-intensive applications.
  • Robust Memory Capacity: With a memory size of 128 Mbit organized as 16M x 8, the BY25Q128ESSIG(R) offers substantial storage capacity in a compact package. This makes it ideal for applications requiring large amounts of data storage without compromising on space.
  • Efficient Write Cycles: The device features write cycle times of 60µs for a word and 2.4ms for a page, ensuring efficient data writing and minimizing latency. This is particularly beneficial for applications that require frequent data updates.
  • Flexible Power Supply: The BY25Q128ESSIG(R) operates within a supply voltage range of 2.7V to 3.6V, providing flexibility in power management and making it suitable for a wide range of power-sensitive applications.
  • Compliance and Safety: The device is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards. This compliance is crucial for manufacturers aiming to adhere to global regulations and reduce environmental impact.
  • Moisture Resistance: With a moisture sensitivity level (MSL) of 3 (168 hours), the BY25Q128ESSIG(R) is designed to withstand humid environments, making it suitable for use in various industrial and consumer electronics applications.

BY25Q128ESSIG(R) Applications

The BY25Q128ESSIG(R) is ideal for a wide range of applications due to its high-speed performance, robust memory capacity, and efficient write cycles. Some specific use cases include:

  • Embedded Systems: The compact form factor and high-speed performance make it suitable for embedded systems in consumer electronics, automotive, and industrial applications.
  • IoT Devices: The device's low power consumption and high storage capacity are ideal for IoT devices that require efficient data storage and retrieval.
  • Wearable Technology: The BY25Q128ESSIG(R) can be used in wearable technology where space and power efficiency are critical.
  • Communication Systems: The high-speed data transfer capabilities make it suitable for communication systems that require rapid data access and storage.
  • Medical Devices: The device's reliability and compliance with environmental standards make it suitable for medical devices where data integrity and safety are paramount.

Conclusion of BY25Q128ESSIG(R)

The BY25Q128ESSIG(R) from BYTe Semiconductor is a high-performance Flash memory IC that offers a combination of speed, capacity, and reliability. Its high clock frequency, fast access times, and efficient write cycles make it a standout choice for applications requiring rapid data processing and storage. The device's compliance with environmental and safety standards, along with its moisture resistance, ensures it is suitable for a wide range of industrial and consumer electronics applications. Whether used in embedded systems, IoT devices, wearable technology, communication systems, or medical devices, the BY25Q128ESSIG(R) provides a reliable and efficient solution for data storage and retrieval.

FAQ

What package or case is BY25Q128ESSIG(R) available in?
BY25Q128ESSIG(R) is available in the 8-SOIC (0.209", 5.30mm Width) package / case.
What is the mounting type of BY25Q128ESSIG(R)?
Are there related or alternative parts for BY25Q128ESSIG(R)?
What is BY25Q128ESSIG(R)?
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Availability (In Stock : 493 )
Quantity Unit Price Ext. Price
1+ $0.75680 $0.76
10+ $0.70576 $7.06
25+ $0.68675 $17.17
50+ $0.67179 $33.59
100+ $0.65683 $65.68
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