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Diodes Incorporated
DMG4800LSD-13
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Tech Specifications
DMG4800LSD-13 Description
DMG4800LSD-13 is a high-performance gallium nitride (GaN) power transistor offered by Diodes Incorporated. This device is designed for use in a variety of high-frequency power conversion applications, including wireless power transfer, battery charging, and DC-DC conversion.
Description:
The DMG4800LSD-13 is a normally-off enhancement mode HEMT with a 650V drain-to-source voltage and a continuous drain current of 4.5A. It features a low on-resistance of 380mΩ max and a high switching speed, making it ideal for use in high-frequency power conversion applications.
Features:
- High-frequency operation up to 1MHz
- Low on-resistance for improved efficiency
- High breakdown voltage for added safety
- Fast switching speed for improved performance
- Enhanced thermal performance for improved reliability
- Small package size for easy integration into compact designs
Applications:
- Wireless power transfer
- Battery charging
- DC-DC conversion
- Class D audio amplifiers
- Motor drives
- LED lighting
Overall, the DMG4800LSD-13 is a high-performance GaN power transistor that offers excellent efficiency, fast switching speeds, and a high breakdown voltage. It is suitable for use in a variety of high-frequency power conversion applications and is available in a compact package for easy integration into a wide range of designs.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.30655 | $1.53 |
| 50+ | $0.24761 | $12.38 |
| 150+ | $0.22236 | $33.35 |
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