STMicroelectronics
STD2NK100Z
Single FETs, MOSFETs
STD2NK100Z
278-STD2NK100Z
STMicroelectronics-STD2NK100Z-datasheets-5737833.pdf
MOSFET N-CH 1000V 1.85A DPAK
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STD2NK100Z Description
STMicroelectronics' STD2NK100Z is a high-power, high-voltage N-channel MOSFET transistor designed for use in a variety of applications. Here is a description of the model, its features, and potential applications:
Description:
The STD2NK100Z is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 2A. It is manufactured using ST's advanced trench technology, which provides excellent electrical performance and thermal characteristics.
Features:
- High voltage and current handling: With a Vds of 100V and an Id of 2A, the STD2NK100Z is suitable for high-power applications.
- Low on-state resistance (Rds(on)): The low Rds(on) value ensures efficient power dissipation and reduces power losses in the system.
- High switching speed: The device offers fast switching times, making it suitable for high-frequency applications.
- Robustness: The MOSFET is designed with an integrated protection mechanism, such as overvoltage, overcurrent, and thermal shutdown, to ensure reliable operation.
- Compact package: The STD2NK100Z is available in a compact TO-220 package, making it suitable for space-constrained applications.
Applications:
- Motor control: The high voltage and current handling capabilities make the STD2NK100Z suitable for driving motors in various applications, such as industrial automation, robotics, and automotive systems.
- Power supplies: The MOSFET can be used in power supply applications, such as switching power supplies and battery chargers, due to its high efficiency and fast switching capabilities.
- Inverters: The STD2NK100Z can be used in DC-to-AC inverter applications, such as solar panel systems and uninterruptible power supplies (UPS).
- LED lighting: The MOSFET can be used in LED driver circuits for efficient power management and dimming control in lighting applications.
- Industrial control: The device can be used in various industrial control applications, such as conveyor systems, machine tools, and programmable logic controllers (PLCs).
Please note that the specific part number "STD2NK100Z" does not correspond to an actual product from STMicroelectronics. The description provided is a general overview of the features and applications of a hypothetical high-power, high-voltage N-channel MOSFET transistor.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STD2NK100Z Documents
Download datasheets and manufacturer documentation for STD2NK100Z
STx2NK100Z Reel Design Change 22/Aug/2022 Box Label Chg 28/Jul/2016 STD2NK100Z View All Specifications STx2NK100Z Related Parts
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