STMicroelectronics_STB6NK60Z-1
original

STMicroelectronics
STB6NK60Z-1

278-STB6NK60Z-1
N-channel 600 V - 1 Ohm - 6 A - I2PAK Zener-Protected SuperMESH(TM) Power MOSFET
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Tech Specifications

Package/Case
TO-262-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.2R
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
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STB6NK60Z-1 Description

N-Channel 600 V 6A (Tc) 110W (Tc) Through Hole I2PAK

FAQ

What is the mounting type of STB6NK60Z-1?
STB6NK60Z-1 uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for STB6NK60Z-1?
What package or case is STB6NK60Z-1 available in?
What voltage specification is listed for STB6NK60Z-1?
What is STB6NK60Z-1?
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