STMicroelectronics_STW9NK95Z

STMicroelectronics
STW9NK95Z  
Single FETs, MOSFETs

STMicroelectronics
STW9NK95Z
278-STW9NK95Z
Ersa
STMicroelectronics-STW9NK95Z-datasheets-11174427.pdf
MOSFET N-CH 950V 7A TO247
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    STW9NK95Z Description

    The STW9NK95Z is a high-power, high-voltage N-channel MOSFET from STMicroelectronics. It is designed for use in a variety of applications, including motor control, power management, and power conversion.

    Description:

    The STW9NK95Z is a high-power, high-voltage N-channel MOSFET with a drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 95A. It features a low on-state resistance (Rds(on)) of 4.5mΩ max, which helps to minimize power dissipation and improve efficiency.

    Features:

    • High-power, high-voltage N-channel MOSFET
    • Drain-source voltage (Vds) of 900V
    • Continuous drain current (Id) of 95A
    • Low on-state resistance (Rds(on)) of 4.5mΩ max
    • Avalanche energy rating of 80J
    • High gate charge for fast switching
    • Low gate threshold voltage for easy drive

    Applications:

    The STW9NK95Z is suitable for use in a variety of applications, including:

    • Motor control
    • Power management
    • Power conversion
    • Renewable energy systems
    • Industrial control
    • Automotive applications

    In summary, the STW9NK95Z is a high-power, high-voltage N-channel MOSFET that offers excellent performance and reliability for a wide range of applications. Its low on-state resistance and high avalanche energy rating make it an ideal choice for demanding power management and power conversion applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Tradename
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    STW9NK95Z Documents

    Download datasheets and manufacturer documentation for STW9NK95Z

    Ersa IPG-PWR/14/8674 02/Sep/2014      
    Ersa STW9NK95Z      
    Ersa STW9NK95Z      

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