STMicroelectronics_STP6N62K3

STMicroelectronics
STP6N62K3  
Single FETs, MOSFETs

STMicroelectronics
STP6N62K3
278-STP6N62K3
Ersa
STMicroelectronics-STP6N62K3-datasheets-9180418.pdf
MOSFET N-CH 620V 5.5A TO220AB
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STP6N62K3 Description

STP6N62K3 Description

The STP6N62K3 is a high-performance MOSFET N-CH 620V 5.5A TO220AB manufactured by STMicroelectronics. This device is part of the SuperMESH3™ series and is designed for applications requiring high voltage and current capabilities. With a maximum drain-to-source voltage of 620V and continuous drain current of 5.5A at 25°C, the STP6N62K3 is ideal for demanding power electronic applications.

STP6N62K3 Features

  • High Voltage and Current Ratings: The STP6N62K3 boasts a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 5.5A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The maximum Rds On at 2.8A and 10V is 1.2 Ohms, ensuring low power dissipation and high efficiency.
  • Robust Gate Drive: The gate charge (Qg) is 34 nC at 10V, and the threshold voltage (Vgs(th)) is 4.5V at 50µA, providing reliable and efficient gate control.
  • Environmental Compliance: The STP6N62K3 is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
  • Thermal Performance: With a maximum power dissipation of 90W at Tc and an operating junction temperature of 150°C, this device can handle high thermal loads.
  • Reliability: The moisture sensitivity level (MSL) is 1, indicating unlimited storage time before reflow soldering, enhancing product reliability.

STP6N62K3 Applications

The STP6N62K3 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, it is well-suited for power supply designs.
  • Motor Controls: Its robust gate drive and low on-resistance make it suitable for motor control applications.
  • Industrial Automation: The device's high thermal performance and reliability make it ideal for industrial automation systems.
  • Automotive Electronics: The STP6N62K3 can be used in automotive electronics, such as electric power steering and battery management systems.

Conclusion of STP6N62K3

The STP6N62K3 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its unique combination of high performance, environmental compliance, and reliability makes it an excellent choice for demanding power electronic applications. With its robust features and superior performance, the STP6N62K3 stands out among similar models, offering significant advantages in terms of efficiency and reliability.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Channel Mode
Product Status
Fall Time
RoHS
Drain to Source Voltage (Vdss)
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Rise Time
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
FET Type
Supplier Device Package
Qg - Gate Charge
Power Dissipation (Max)
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Length
Pd - Power Dissipation
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STP6N62K3 Documents

Download datasheets and manufacturer documentation for STP6N62K3

Ersa STx6N62K3      
Ersa STP6N62K3 View All Specifications      
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