STMicroelectronics_STF6N62K3

STMicroelectronics
STF6N62K3  
Single FETs, MOSFETs

STMicroelectronics
STF6N62K3
278-STF6N62K3
Ersa
STMicroelectronics-STF6N62K3-datasheets-8304612.pdf
MOSFET N-CH 620V 5.5A TO220FP
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STF6N62K3 Description

STF6N62K3 Description

The STF6N62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 5.5A at 25°C, this MOSFET is ideal for high-voltage, high-current applications. Its low on-resistance (Rds On) of 1.28Ohm at 2.8A and 10V, along with a maximum gate-source voltage (Vgs) of ±30V, ensures efficient power dissipation and high-speed switching.

STF6N62K3 Features

  • High Voltage and Current Handling: With a Vdss of 620V and Id of 5.5A, the STF6N62K3 can handle high voltage and current loads, making it suitable for power electronics applications.
  • Low On-Resistance: The low Rds On of 1.28Ohm at 2.8A and 10V minimizes power losses and improves efficiency.
  • Robust Gate Control: The maximum Vgs of ±30V ensures reliable gate control and high-speed switching.
  • High-Temperature Operation: The operating temperature range of -55°C to 150°C (TJ) allows the STF6N62K3 to operate in harsh environments.
  • Compliance and Environmental: The STF6N62K3 is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, making it environmentally friendly and suitable for a wide range of applications.

STF6N62K3 Applications

The STF6N62K3 is ideal for various applications where high voltage, high current, and efficient power management are required. Some specific use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the STF6N62K3 can handle high voltage and current loads while minimizing power losses.
  • Motor Controls: For electric vehicle (EV) motor drives and industrial motor control applications, the STF6N62K3 provides efficient switching and high current handling capabilities.
  • Renewable Energy Systems: In solar inverters and wind power systems, the STF6N62K3 can manage high voltage and current loads while ensuring efficient power conversion.

Conclusion of STF6N62K3

The STF6N62K3 from STMicroelectronics is a powerful N-Channel MOSFET designed for high-voltage, high-current applications. Its unique combination of high voltage and current handling, low on-resistance, and robust gate control makes it an ideal choice for power electronics, motor controls, and renewable energy systems. With its compliance and environmental certifications, the STF6N62K3 is a reliable and efficient solution for demanding applications in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF6N62K3 Documents

Download datasheets and manufacturer documentation for STF6N62K3

Ersa STx6N62K3      
Ersa Box Label Chg 28/Jul/2016      
Ersa STF6N62K3 View All Specifications      
Ersa STx6N62K3      
Ersa STF6N62K3 Spice Model      
Ersa Marking Layout 10/May/2023      

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