STMicroelectronics_STF24NM60N

STMicroelectronics
STF24NM60N  
Single FETs, MOSFETs

STMicroelectronics
STF24NM60N
278-STF24NM60N
Ersa
STMicroelectronics-STF24NM60N-datasheets-252659.pdf
MOSFET N-CH 600V 17A TO220FP
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    STF24NM60N Description

    The STF24NM60N is a high voltage N-channel MOSFET from STMicroelectronics. It is designed for high voltage applications and offers several features that make it suitable for a wide range of applications.

    Description:

    The STF24NM60N is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-pin device with a source, gate, and drain. The device is designed to operate at high voltages and can handle a maximum drain-source voltage (VDS) of 600V.

    Features:

    1. High Voltage: The STF24NM60N can handle a maximum drain-source voltage of 600V, making it suitable for high voltage applications.
    2. Low On-Resistance: The device has a low on-resistance (RDS(on)) of 4.5 mΩ, which helps to minimize power dissipation and improve efficiency.
    3. High Input Impedance: The gate of the MOSFET has a high input impedance, which means it requires very little current to turn on and off.
    4. Fast Switching: The device has a fast switching time, which makes it suitable for applications that require high-speed switching.
    5. Avalanche Rated: The STF24NM60N is designed to withstand high energy pulses, making it suitable for applications that may experience voltage spikes.

    Applications:

    The STF24NM60N is suitable for a wide range of applications that require high voltage and fast switching. Some of the common applications include:

    1. Motor Control: The device can be used in motor control applications, such as in industrial machinery and robotics.
    2. Power Supplies: The STF24NM60N can be used in power supply applications, such as in switching power supplies and battery chargers.
    3. Inverters: The device can be used in inverter applications, such as in solar panel systems and uninterruptible power supplies (UPS).
    4. Automotive: The MOSFET can be used in automotive applications, such as in electric vehicle (EV) charging systems and power steering systems.
    5. Industrial Control: The STF24NM60N can be used in industrial control applications, such as in conveyor systems and manufacturing equipment.

    In summary, the STF24NM60N is a high voltage N-channel MOSFET that offers several features, such as low on-resistance, high input impedance, and fast switching. It is suitable for a wide range of applications that require high voltage and fast switching, such as motor control, power supplies, inverters, automotive, and industrial control.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF24NM60N Documents

    Download datasheets and manufacturer documentation for STF24NM60N

    Ersa IPG-PWR/14/8603 21/Jul/2014      
    Ersa STx24NM60N      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STF24NM60N View All Specifications      
    Ersa STx24NM60N      
    Ersa Marking Layout 10/May/2023      

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