STMicroelectronics_STD2LN60K3

STMicroelectronics
STD2LN60K3  
Single FETs, MOSFETs

STMicroelectronics
STD2LN60K3
278-STD2LN60K3
Ersa
STMicroelectronics-STD2LN60K3-datasheets-12393262.pdf
MOSFET N CH 600V 2A DPAK
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    STD2LN60K3 Description

    STD2LN60K3 Description

    The STD2LN60K3 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring a robust and reliable semiconductor component. This N-channel device offers a superior combination of high voltage and current capabilities, making it ideal for various power electronics applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2A at 25°C, the STD2LN60K3 delivers excellent performance in demanding environments.

    STD2LN60K3 Features

    • High Voltage and Current Ratings: The STD2LN60K3 boasts a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2A at 25°C, ensuring reliable operation in high-voltage and high-current applications.
    • Low On-Resistance: With a maximum Rds(on) of 4.5Ω at 1A and 10V, the STD2LN60K3 offers low power dissipation and high efficiency in power conversion circuits.
    • Superior Thermal Performance: The device features a power dissipation (Pd) of up to 45W at case temperature (Tc), enabling efficient heat management in high-power applications.
    • Robust Gate Drive: The STD2LN60K3 has a maximum gate-source voltage (Vgs) of ±30V, providing a wide operating range and improved gate control.
    • Advanced Technology: Utilizing STMicroelectronics' SuperMESH3™ technology, the STD2LN60K3 offers enhanced performance, reliability, and stability compared to similar models.

    STD2LN60K3 Applications

    The STD2LN60K3 is well-suited for a variety of applications, including:

    • Power Supplies: Its high voltage and current ratings make it ideal for use in power supply circuits, where efficient power conversion and reliable operation are critical.
    • Motor Control: The low on-resistance and high current capabilities of the STD2LN60K3 make it suitable for motor control applications, where precise control and efficient power delivery are essential.
    • Industrial Automation: The device's robust performance and high power dissipation capabilities make it an excellent choice for industrial automation systems, where reliability and durability are paramount.

    Conclusion of STD2LN60K3

    The STD2LN60K3 from STMicroelectronics is a powerful and versatile MOSFET, offering a unique combination of high voltage, current, and thermal performance. Its advanced SuperMESH3™ technology and robust specifications make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, and industrial automation. With its superior performance and reliability, the STD2LN60K3 stands out as a top choice for engineers and designers looking to enhance their system's capabilities.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD2LN60K3 Documents

    Download datasheets and manufacturer documentation for STD2LN60K3

    Ersa STx2LN60K3      
    Ersa Reel Design Change 22/Aug/2022       Box Label Chg 28/Jul/2016      
    Ersa STD2LN60K3 View All Specifications      
    Ersa STx2LN60K3      

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