The STP20NK50Z from STMicroelectronics is a high-performance N-channel Power MOSFET designed for demanding power switching applications. With a 500V drain-to-source voltage (Vdss) and 17A continuous drain current (Id), it delivers robust performance in high-voltage circuits. Part of the SuperMESH™ series, this MOSFET leverages advanced Metal Oxide Semiconductor (MOS) technology to achieve low conduction losses, characterized by an Rds(on) of just 270mΩ at 10V gate drive. Its 190W maximum power dissipation (Tc) ensures reliability under high thermal stress, while the ±30V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry. Packaged in a TO-220AB through-hole format, it is suitable for both industrial and consumer applications requiring efficient power management.
The STP20NK50Z stands out as a high-efficiency, high-voltage MOSFET with superior thermal and electrical characteristics. Its low Rds(on), fast switching, and rugged design make it a preferred choice for power electronics engineers. Whether in industrial motor drives, renewable energy systems, or consumer power supplies, this MOSFET ensures reliable performance and long-term durability, backed by STMicroelectronics' proven SuperMESH™ technology.
Download datasheets and manufacturer documentation for STP20NK50Z