STMicroelectronics_STP20NK50Z

STMicroelectronics
STP20NK50Z  
Single FETs, MOSFETs

STMicroelectronics
STP20NK50Z
278-STP20NK50Z
Ersa
STMicroelectronics-STP20NK50Z-datasheets-11650882.pdf
MOSFET N-CH 500V 17A TO220AB
In Stock : 2946

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STP20NK50Z Description

STP20NK50Z Description

The STP20NK50Z from STMicroelectronics is a high-performance N-channel Power MOSFET designed for demanding power switching applications. With a 500V drain-to-source voltage (Vdss) and 17A continuous drain current (Id), it delivers robust performance in high-voltage circuits. Part of the SuperMESH™ series, this MOSFET leverages advanced Metal Oxide Semiconductor (MOS) technology to achieve low conduction losses, characterized by an Rds(on) of just 270mΩ at 10V gate drive. Its 190W maximum power dissipation (Tc) ensures reliability under high thermal stress, while the ±30V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry. Packaged in a TO-220AB through-hole format, it is suitable for both industrial and consumer applications requiring efficient power management.

STP20NK50Z Features

  • High Voltage Rating: 500V Vdss for robust operation in AC/DC converters and inverters.
  • Low On-Resistance: 270mΩ (max) at 10V Vgs minimizes conduction losses.
  • Fast Switching: Optimized gate charge (Qg = 119nC @ 10V) and input capacitance (Ciss = 2600pF @ 25V) enhance efficiency in high-frequency applications.
  • Thermal Performance: 190W power dissipation (Tc) ensures stability in high-power designs.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling robustness.
  • Wide Drive Voltage Range: Supports up to ±30V Vgs, accommodating diverse gate drive requirements.

STP20NK50Z Applications

  • Switched-Mode Power Supplies (SMPS): Ideal for PFC stages and DC-DC converters.
  • Motor Drives: Efficient control in industrial and automotive inverters.
  • Lighting Systems: High-voltage LED drivers and ballast circuits.
  • Renewable Energy: Solar inverters and battery management systems.
  • Consumer Electronics: Power supplies for TVs, adapters, and appliances.

Conclusion of STP20NK50Z

The STP20NK50Z stands out as a high-efficiency, high-voltage MOSFET with superior thermal and electrical characteristics. Its low Rds(on), fast switching, and rugged design make it a preferred choice for power electronics engineers. Whether in industrial motor drives, renewable energy systems, or consumer power supplies, this MOSFET ensures reliable performance and long-term durability, backed by STMicroelectronics' proven SuperMESH™ technology.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP20NK50Z Documents

Download datasheets and manufacturer documentation for STP20NK50Z

Ersa STF/P20NK50Z      
Ersa STP20NK50Z View All Specifications      
Ersa STF/P20NK50Z      

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