STMicroelectronics_STP2NK100Z
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STMicroelectronics
STP2NK100Z

278-STP2NK100Z
PDF Datasheet
1kV N-Ch MOSFET, 1.85A, 8.5R RdsOn, TO-220
13 Weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
1.85A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
8.5R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
8.5R
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
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STP2NK100Z Description

STP2NK100Z Description

The STP2NK100Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 1.85A at 25°C, this device is well-suited for high-voltage, high-current applications. The STP2NK100Z features a low on-resistance (Rds On) of 8.5Ω at 900mA and 10V, ensuring minimal power dissipation and high efficiency. Its SuperMESH™ technology provides excellent thermal performance and reliability.

STP2NK100Z Features

  • High Voltage Rating: 1000V drain-to-source voltage (Vdss) for robust power handling.
  • High Current Capacity: 1.85A continuous drain current (Id) at 25°C for high-power applications.
  • Low On-Resistance: 8.5Ω Rds On at 900mA and 10V for minimal power dissipation.
  • SuperMESH™ Technology: Enhanced thermal performance and reliability.
  • Wide Gate Voltage Range: ±30V Vgs (Max) for flexible gate drive compatibility.
  • Low Gate Threshold Voltage: 4.5V Vgs(th) (Max) @ 50µA for efficient switching.
  • Low Input Capacitance: 499pF Ciss (Max) @ 25V for fast switching and reduced parasitic effects.
  • Low Gate Charge: 16nC Qg (Max) @ 10V for reduced switching losses.
  • RoHS3 Compliance: Environmentally friendly and suitable for green electronics.
  • REACH Unaffected: Compliant with European chemical regulations.
  • Moisture Sensitivity Level 1: Unlimited storage time in a dry environment.

STP2NK100Z Applications

The STP2NK100Z is ideal for a variety of high-voltage, high-current applications, including:

  1. Power Supplies: High-efficiency switching in power supply designs.
  2. Motor Controls: Reliable operation in motor drive circuits.
  3. Industrial Automation: Durable performance in harsh industrial environments.
  4. Automotive Electronics: Reliable operation in high-voltage automotive applications.
  5. RF Power Amplifiers: Efficient switching in high-power RF amplifiers.

Conclusion of STP2NK100Z

The STP2NK100Z from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding high-voltage, high-current applications. Its combination of high voltage rating, low on-resistance, and advanced SuperMESH™ technology make it an excellent choice for power supplies, motor controls, industrial automation, automotive electronics, and RF power amplifiers. With its RoHS3 compliance and REACH unaffected status, the STP2NK100Z is also an environmentally friendly option for green electronics.

FAQ

What voltage specification is listed for STP2NK100Z?
The listed voltage-related specification for STP2NK100Z is 1kV.
What is the mounting type of STP2NK100Z?
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