STMicroelectronics_STP2NK100Z

STMicroelectronics
STP2NK100Z  
Single FETs, MOSFETs

STMicroelectronics
STP2NK100Z
278-STP2NK100Z
Ersa
STMicroelectronics-STP2NK100Z-datasheets-5330377.pdf
MOSFET N-CH 1000V 1.85A TO220AB
In Stock : 1369

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STP2NK100Z Description

STP2NK100Z Description

The STP2NK100Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 1.85A at 25°C, this device is well-suited for high-voltage, high-current applications. The STP2NK100Z features a low on-resistance (Rds On) of 8.5Ω at 900mA and 10V, ensuring minimal power dissipation and high efficiency. Its SuperMESH™ technology provides excellent thermal performance and reliability.

STP2NK100Z Features

  • High Voltage Rating: 1000V drain-to-source voltage (Vdss) for robust power handling.
  • High Current Capacity: 1.85A continuous drain current (Id) at 25°C for high-power applications.
  • Low On-Resistance: 8.5Ω Rds On at 900mA and 10V for minimal power dissipation.
  • SuperMESH™ Technology: Enhanced thermal performance and reliability.
  • Wide Gate Voltage Range: ±30V Vgs (Max) for flexible gate drive compatibility.
  • Low Gate Threshold Voltage: 4.5V Vgs(th) (Max) @ 50µA for efficient switching.
  • Low Input Capacitance: 499pF Ciss (Max) @ 25V for fast switching and reduced parasitic effects.
  • Low Gate Charge: 16nC Qg (Max) @ 10V for reduced switching losses.
  • RoHS3 Compliance: Environmentally friendly and suitable for green electronics.
  • REACH Unaffected: Compliant with European chemical regulations.
  • Moisture Sensitivity Level 1: Unlimited storage time in a dry environment.

STP2NK100Z Applications

The STP2NK100Z is ideal for a variety of high-voltage, high-current applications, including:

  1. Power Supplies: High-efficiency switching in power supply designs.
  2. Motor Controls: Reliable operation in motor drive circuits.
  3. Industrial Automation: Durable performance in harsh industrial environments.
  4. Automotive Electronics: Reliable operation in high-voltage automotive applications.
  5. RF Power Amplifiers: Efficient switching in high-power RF amplifiers.

Conclusion of STP2NK100Z

The STP2NK100Z from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding high-voltage, high-current applications. Its combination of high voltage rating, low on-resistance, and advanced SuperMESH™ technology make it an excellent choice for power supplies, motor controls, industrial automation, automotive electronics, and RF power amplifiers. With its RoHS3 compliance and REACH unaffected status, the STP2NK100Z is also an environmentally friendly option for green electronics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP2NK100Z Documents

Download datasheets and manufacturer documentation for STP2NK100Z

Ersa STx2NK100Z      
Ersa Box Label Chg 28/Jul/2016      
Ersa STP2NK100Z View All Specifications      
Ersa STx2NK100Z      

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