STMicroelectronics_STD2HNK60Z

STMicroelectronics
STD2HNK60Z  
Single FETs, MOSFETs

STMicroelectronics
STD2HNK60Z
278-STD2HNK60Z
Ersa
STMicroelectronics-STD2HNK60Z-datasheets-5545348.pdf
MOSFET N-CH 600V 2A DPAK
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STD2HNK60Z Description

STD2HNK60Z Description

The STD2HNK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device is part of the SuperMESH™ series, known for its superior performance and reliability. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2A at 25°C, the STD2HNK60Z is well-suited for demanding power electronic applications.

STD2HNK60Z Features

  • 600V Drain-to-Source Voltage (Vdss): The STD2HNK60Z can handle high voltage applications, making it ideal for power electronics and motor control.
  • 2A Continuous Drain Current (Id) @ 25°C: This MOSFET can handle significant current loads, ensuring reliable operation in power management circuits.
  • Low Rds On (Max) @ Id, Vgs: With a maximum Rds On of 4.8 Ohms @ 1A, 10V, the STD2HNK60Z offers low on-resistance for efficient power dissipation.
  • 4.5V Vgs(th) (Max) @ Id: The STD2HNK60Z has a low threshold voltage, enabling easy gate drive and reducing power consumption.
  • 45W Power Dissipation (Max): This MOSFET can dissipate high power, making it suitable for applications with high thermal demands.
  • DPAK Package: The STD2HNK60Z is available in a DPAK package, providing a compact and robust solution for surface mount applications.
  • REACH Unaffected and ROHS3 Compliant: This device meets environmental regulations, ensuring its use in a wide range of applications without environmental concerns.

STD2HNK60Z Applications

The STD2HNK60Z is an excellent choice for applications that require high voltage and current handling capabilities, such as:

  • Power Electronics: Due to its high Vdss and Id ratings, the STD2HNK60Z is ideal for power supply designs and power management circuits.
  • Motor Control: The low Rds On and high Vdss make this MOSFET suitable for motor drive applications, ensuring efficient power transfer and control.
  • Industrial Automation: The STD2HNK60Z can be used in industrial control systems where high voltage and current handling are critical.

Conclusion of STD2HNK60Z

The STD2HNK60Z from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage, current handling, and low on-resistance. Its robust DPAK package and compliance with environmental regulations make it a versatile and reliable choice for a wide range of power electronic applications. With its unique features and advantages, the STD2HNK60Z stands out as a preferred solution in demanding applications where performance and reliability are paramount.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD2HNK60Z Documents

Download datasheets and manufacturer documentation for STD2HNK60Z

Ersa STx2HNK60Z(x)      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD2HNK60Z View All Specifications      
Ersa STx2HNK60Z(x)      

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