STMicroelectronics
STU2N105K5  
Single FETs, MOSFETs

STMicroelectronics
STU2N105K5
278-STU2N105K5
Ersa
STMicroelectronics-STU2N105K5-datasheets-5410015.pdf
MOSFET N-CH 1050V 1.5A IPAK
In Stock : 5972

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ISO9001
Quality Policy
ISO45001
ISO14001

STU2N105K5 Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STU2N105K5 belongs to can be classified under the Discrete Semiconductors. STU2N105K5 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STU2N105K5 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STU2N105K5 Documents

Download datasheets and manufacturer documentation for STU2N105K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STx2N105K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa Mult Dev Reinstate 6/Aug/2020       Mult Dev OBS 3/Jul/2020      
Ersa STx2N105K5      

Shopping Guide

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