STMicroelectronics_STB23N80K5

STMicroelectronics
STB23N80K5  
Single FETs, MOSFETs

STMicroelectronics
STB23N80K5
278-STB23N80K5
Ersa
STMicroelectronics-STB23N80K5-datasheets-6989422.pdf
MOSFET N-CH 800V 16A D2PAK
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STB23N80K5 Description

STB23N80K5 Description

The STB23N80K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This N-Channel device features a D2PAK package, making it suitable for surface-mount applications. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 16A at 25°C, the STB23N80K5 is ideal for demanding power electronics applications.

STB23N80K5 Features

  • High Voltage and Current Ratings: The STB23N80K5 boasts an impressive drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 16A at 25°C, making it suitable for high-power applications.
  • Low On-State Resistance: With a maximum Rds(on) of 280mOhm at 8A and 10V, the STB23N80K5 offers low conduction losses, improving efficiency in power conversion applications.
  • Fast Switching Speed: The device's gate charge (Qg) of 33nC at 10V and input capacitance (Ciss) of 1000pF at 100V enable fast switching, reducing switching losses and improving overall performance.
  • Robust Gate Drive: The STB23N80K5 has a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of gate drive conditions.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious applications.
  • Moisture Sensitivity Level (MSL) 1: The STB23N80K5 has an MSL of 1, indicating unlimited storage time before reflow soldering, simplifying handling and logistics.

STB23N80K5 Applications

The STB23N80K5 is ideal for a variety of high-power applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  • Motor Control: The STB23N80K5's robust performance characteristics make it well-suited for motor control applications, including industrial motor drives and electric vehicle (EV) motor control.
  • Renewable Energy: The device's high voltage and current capabilities make it suitable for renewable energy applications, such as solar inverters and wind turbine converters.
  • Industrial Automation: The STB23N80K5 can be used in industrial automation systems, such as servo drives and robotic control systems, where high power and reliability are critical.

Conclusion of STB23N80K5

The STB23N80K5 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronics applications. Its high voltage and current ratings, low on-state resistance, and fast switching capabilities make it an excellent choice for power supplies, motor control, renewable energy, and industrial automation systems. With its robust performance, environmental compliance, and ease of handling, the STB23N80K5 is a reliable and efficient solution for high-power applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB23N80K5 Documents

Download datasheets and manufacturer documentation for STB23N80K5

Ersa STB23N80K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB23N80K5      

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